Videos ...

Power electronics firm Semikron Danfoss is using a new polyphthalamide (PPA) material from BASF for housing its Semitrans 10 IGBT which is designed for inverters of photovoltaic and wind energy ...

The US Department of Commerce and Wolfspeed have signed a non-binding preliminary memorandum of terms (PMT) for up to $750 ...

Cambridge GaN Devices (CGD) has announced that it's exhibiting at the IEEE Energy Conversion Congress and Expo (October 21 and 22, Phoenix Convention Center, Phoenix, Arizona, USA). for the first time ...

Infineon Technologies is introducing the HybridPACK Drive G2 Fusion, establishing a new power module standard for traction ...

NoMIS Power Corporation unveiled its first range of advanced 1200 V SiC MOSFETs at ICSCRM 2024, in Raleigh, North Carolina earlier this month. The SiC MOSFET technology will also be used an upcoming ...

YASA, a UK subsidiary of Mercedes-Benz, is partnering with Formula Student 2025 as part of its ambition to inspire the next ...

Navitas Semiconductor has announced GaNSlim, a new generation of integrated GaN power ICs designed to simplify and speed the ...

Infineon has announced a partnership with Canada-based AWL-Electricity, combining Infineon's CoolGaN technology with AWL-E's ...

A 48V/180A BMS demo is the latest Innoscience design solution to support a high-side same-port BMS application. This design ...

Navitas Semiconductor's high-power GaNSafe family is now available in a TOLT (Transistor Outline Leaded Top-side cooling) ...

Friends or foes? To answer this crucial question, let’s begin by taking a comparative look at the prevailing structures of the dominant GaN and SiC power devices, as summarised in Table 1. For this ...